峻茂新材料 (SCITEO) - 半导体封装与高阶制造高性能胶供应商
峻茂新材料 (SCITEO) - 半导体封装与高阶制造高性能胶供应商
SC6678 MEMS Sensor Packaging Adhesive — Insulating, Thermal, Conductive, Low-CTE, Bonding & Seal
SCITEO LAB TRUST100% Lab Tested
DISPENSING HARDWARENordson Syringe
STABILITY PROTECTIONSyringe Vacuum Pack
PACKAGINGPackaging: 10cc/syringe

Precision Molecular Engineering

SC6678 MEMS Sensor Packaging Adhesive — Insulating, Thermal, Conductive, Low-CTE, Bonding & Seal

MEMS sensor adhesive series. −55–500°C, 2–60W thermal, ultra-low resistivity conductive, insulating hermetic, 13 ppm low-CTE drift prevention. Multiple viscosity/thixotropy variants.

Typical Application

MEMS chip sensors — bonding, filling, sealing, conduction, thermal & insulation protection.

Technical Specifications
Shear Strength28 MPa
Temp Range−55°C – 500°C (selectable)
Cure Condition120°C / 30 min
Thermal Conductivity2–60 W/m·K
* Multiple specifications are available for this series.
SCITEO Rigorous Standards: Certified via GJB150 testing by Zhenhua, CETC, and CAC, providing reliable support.

This product provides local substitution for Shanghai Zhangjiang High-Tech Park, Xi'an & Chengdu military industrial bases, and Wuxi packaging industrial cluster.

APPLICATION FIELDS

High Reliability Scenarios

Core positioning and partial application demonstration of this product under complex operating cycles.

SC6678 MEMS sensor adhesive for MEMS chip bonding & sealing

MEMS chip bonding

SC6678 MEMS sensor adhesive for thermal conductivity sensor bonding & sealing

Thermal conductivity sensor sealing

SC6678 MEMS sensor adhesive for micro-optical sensor bonding & sealing

Micro-optical sensor sealing

FAQ & RESOLUTIONS

Application Engineer FAQ

SCITEO's structured answers regarding physical properties, industry standards, operating procedures, and technical specifications.

Q

How does SC6678 handle −55°C to 500°C interfacial cracking?

A

Full-series CTE locked at 13–30 ppm. Elastic stress-buffer layer formed during extreme thermal cycling. Prevents MEMS microstructure deformation and delamination from CTE mismatch.

Q

High thermal or ultra-low-resistivity conduction for high-power/sensitive MEMS?

A

0–60 W/m·K multi-tier thermal matching and chip-grade conductive networks. Pressureless die-attach with simultaneous extreme transient thermal dissipation and chip-grade ultra-low resistivity.

SCITEO Application Engineering Support

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